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Ultra High Frequency Device Lead

2 weeks ago

Queenstown, New Zealand Agency for Science, Technology and Research Full time

Required Skills and Qualifications

  • PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields.
  • Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
  • At least 10 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development.